TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 31 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.035 Ω |
Polarity | N-Channel |
Power Dissipation | 31 W |
Threshold Voltage | 2 V |
Drain to Source Voltage (Vds) | 55 V |
Continuous Drain Current (Ids) | 22A |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 880pF @25V(Vds) |
Fall Time | 21 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 37W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.6 mm |
Size-Width | 4.8 mm |
Size-Height | 8.9 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLIZ34NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Isolated package
● 2.5kVrms High voltage isolation
● 4.8mm Sink to lead creepage distance
● Fully avalanche rated
● Optimized for logic level drive
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