| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 38 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.175 Ω |
| Polarity | P-Channel |
| Power Dissipation | 38 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 350 pF |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 11A |
| Rise Time | 55 ns |
| Reverse recovery time | 47 ns |
| Maximum Forward Voltage (Max) | 1.6 V |
| Input Capacitance (Ciss) | 350pF @25V(Vds) |
| Input Power (Max) | 38 W |
| Fall Time | 37 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature | -55℃ ~ 150℃ |
| Power Dissipation (Max) | 38W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFR9024NPBF is a P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Dynamic dv/dt rating
● Fully avalanche rated
● Advanced process technology
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