| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 130 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.036 Ω |
| Polarity | N-Channel |
| Power Dissipation | 130 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1960 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 32A |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 1960pF @25V(Vds) |
| Input Power (Max) | 130 W |
| Fall Time | 35 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 130W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 7.49 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
Infineon
10 Pages / 0.28 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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3 Pages / 0.14 MByte
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MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 36Milliohms; ID 32A; D-Pak (TO-252AA); -55deg
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