| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 47 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.01 Ω |
| Polarity | N-Channel |
| Power Dissipation | 47 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 52A |
| Rise Time | 140 ns |
| Input Capacitance (Ciss) | 3600pF @25V(Vds) |
| Input Power (Max) | 58 W |
| Fall Time | 78 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 58W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Height | 9.8 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLI3705NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
● Logic level gate drive
Infineon
9 Pages / 1.33 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.32 MByte
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2 Pages / 0.06 MByte
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1 Pages / 0.12 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.01Ω; ID 52A; TO-220 Full-Pak; PD 58W; -55deg
International Rectifier
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
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