| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-261-4 |
| Power Rating | 2.1 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.065 Ω |
| Polarity | N-CH |
| Power Dissipation | 1 W |
| Threshold Voltage | 2 V |
| Input Capacitance | 510 pF |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 4.4A |
| Rise Time | 21 ns |
| Input Capacitance (Ciss) | 510pF @25V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.739 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRLL024NTRPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It is designed for surface-mount using vapour phase, infrared or wave soldering techniques.
● Advanced process technology
● Ultra-low ON-resistance
● Fully avalanche rating
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
● Logic level
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MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 4.4A; SOT-223; PD 2.1W; VGS +/-16V
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 4.4A; SOT-223; PD 2.1W; VGS +/-16V
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Trans MOSFET N-CH 55V 5A 4Pin(3+Tab) SOT-223 Tube
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Trans MOSFET N-CH 55V 5A 4Pin(3+Tab) SOT-223 T/R
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55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
International Rectifier
MOSFET N-CH 55V 5A SOT223
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