| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 200 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.045 Ω |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Threshold Voltage | 5.5 V |
| Input Capacitance | 2520 pF |
| Drain to Source Voltage (Vds) | 150 V |
| Breakdown Voltage (Drain to Source) | 150 V |
| Continuous Drain Current (Ids) | 41A |
| Rise Time | 63 ns |
| Input Capacitance (Ciss) | 2520pF @25V(Vds) |
| Input Power (Max) | 200 W |
| Fall Time | 14 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 200W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.65 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFB41N15DPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance including effective COSS to simplify design. It is suitable for high frequency DC-to-DC converters.
● Fully characterized avalanche voltage and current
● Low gate-to-drain charge to reduce switching losses
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International Rectifier
Trans MOSFET N-CH 150V 41A 3Pin(3+Tab) TO-220AB Tube
International Rectifier
MOSFET N-CH 150V 41A TO-220AB
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