| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.028 Ω |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 50.0 A |
| Rise Time | 230 ns |
| Input Capacitance (Ciss) | 3300pF @25V(Vds) |
| Input Power (Max) | 150 W |
| Fall Time | 110 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.01 mm |
| Minimum Packing Quantity | 50 |
Single N-Channel 60 V 0.028 Ohms Flange Mount Power Mosfet - TO-220-3
VISHAY
8 Pages / 1.62 MByte
VISHAY
8 Pages / 1.56 MByte
International Rectifier
MOSFET N-CH 60V 50A TO-220AB
Vishay Siliconix
MOSFET N-CH 60V 50A TO-220AB
Samsung
N-CHANNEL LOGIC LEVEL MOSFET
Vishay Intertechnology
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Vishay Semiconductor
Trans MOSFET N-CH 60V 50A 3Pin(3+Tab) TO-220AB
Fairchild
Power Field-Effect Transistor, 35A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Infineon
Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
50A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
