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IXBT42N170
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IXBT42N170 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-268-3
Description:Trans IGBT Chip N-CH 1700V 80A 360000mW 3Pin(2+Tab) TO-268
Documentation:IXBT42N170 Datasheet (5 Pages)
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IXBT42N170 Datasheet PDF (5 Pages)
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IXBT42N170 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-268-3
Power Dissipation360000 mW
Breakdown Voltage (Collector to Emitter)1700 V
Reverse recovery time1.32 µs
Input Power (Max)360 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)360000 mW
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IXBT42N170 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXBT42N170 Documents

IXBT42N170 Datasheet
IXYS Semiconductor
5 Pages / 0.17 MByte

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Trans IGBT Chip N-CH 1700V 80A 360000mW 3Pin(2+Tab) TO-268
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