| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -2.30 A |
| Case/Package | SOIC-8 |
| Power Rating | 2 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 250 mΩ |
| Polarity | P-Channel, Dual P-Channel |
| Power Dissipation | 2 W |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 2.30 A |
| Rise Time | 9 ns |
| Input Capacitance (Ciss) | 394pF @30V(Vds) |
| Input Power (Max) | 900 mW |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The NDS9948 is a dual P-channel MOSFET produced using PowerTrench® process. It has been optimized for applications requiring a wide range of gate drive voltage ratings (4.5 to 20V). The device is suitable for use with load switch and battery protection applications.
● Low gate charge
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● ±20V Gate to source voltage
● 2A Continuous drain current
● 1.6A Pulsed drain current
Fairchild
6 Pages / 0.25 MByte
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