| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 300000 mW |
| Breakdown Voltage (Collector to Emitter) | 2500 V |
| Reverse recovery time | 1.6 µs |
| Input Power (Max) | 300 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This powerful and secure IXBX25N250 IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 2500 V. Its maximum power dissipation is 300000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
IXYS Semiconductor
6 Pages / 0.16 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 2500V 55A 300000mW 3Pin(3+Tab) PLUS 247
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