| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.7 Ω |
| Polarity | N-Channel |
| Power Dissipation | 360 W |
| Threshold Voltage | 4.5 V |
| Drain to Source Voltage (Vds) | 1 kV |
| Breakdown Voltage (Drain to Source) | 1000 V |
| Continuous Drain Current (Ids) | 15.0 A |
| Rise Time | 30 ns |
| Input Capacitance (Ciss) | 4500pF @25V(Vds) |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 360W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH15N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features low package inductance easy to drive and to protect and fast intrinsic rectifier.
● Unclamped inductive switching (UIS) rated
● International standard package
● Rugged polysilicon gate cell structure
● Low RDS (ON)
● High dV/dt and low trr
● Easy to mount
● High power density
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