| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 3.1 mΩ |
| Power Dissipation | 480 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Rise Time | 36 ns |
| Input Capacitance (Ciss) | 12600pF @25V(Vds) |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 480W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 60V 270A (Tc) 480W (Tc) Through Hole TO-247
IXYS Semiconductor
6 Pages / 0.27 MByte
IXYS Semiconductor
Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO247; 37ns
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