| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.16 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.04 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 50A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 6300pF @25V(Vds) |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1040W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH50N60P3 is a 600V N-channel Enhancement Mode Polar3™ Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
● Avalanche rated
● Low inductance
● High power density
● Easy to mount
● Space-saving s
IXYS Semiconductor
6 Pages / 0.14 MByte
IXYS Semiconductor
5 Pages / 0.13 MByte
IXYS Semiconductor
Mosfet n-Ch 600V 50A To247
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