| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 960 W |
| Threshold Voltage | 6.5 V |
| Drain to Source Voltage (Vds) | 1.2 kV |
| Breakdown Voltage (Drain to Source) | 1200 V |
| Continuous Drain Current (Ids) | 26A |
| Rise Time | 55 ns |
| Input Capacitance (Ciss) | 14000pF @25V(Vds) |
| Fall Time | 58 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 960W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 19.96 mm |
| Size-Width | 5.13 mm |
| Size-Height | 26.16 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Looking for a component that can both amplify and switch between signals within your circuit? The IXFK26N120P power MOSFET from Ixys Corporation provides the solution. Its maximum power dissipation is 960000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
IXYS Semiconductor
4 Pages / 0.11 MByte
IXYS Semiconductor
MOSFET N-CH 1200V 26A TO-264
Littelfuse
Trans MOSFET N-CH 1.2KV 26A 3-Pin(3+Tab) TO-264
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