TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 120 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Power Dissipation | 900 mW |
Breakdown Voltage (Collector to Emitter) | 120 V |
hFE Min | 100 @100mA, 5V |
Input Power (Max) | 900 mW |
DC Current Gain (hFE) | 120 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 900 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Material | Silicon |
Size-Length | 4.9 mm |
Size-Width | 3.9 mm |
Size-Height | 8 mm |
Operating Temperature | 150℃ (TJ) |
The KSA916YTA is a PNP Epitaxial Silicon Transistor offers -120V collector base voltage and -800mA collector current. It is suitable for low audio power amplifier applications.
● Driver stage amplifier
● Complement to KSC2316
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