TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 6.25 Ω |
Polarity | N-Channel |
Power Dissipation | 70 W |
Threshold Voltage | 3.75 V |
Drain to Source Voltage (Vds) | 1000 V |
Continuous Drain Current (Ids) | 2A |
Input Capacitance (Ciss) | 499pF @25V(Vds) |
Input Power (Max) | 70 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 70W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 15.75 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STP2NK100Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST"s well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, specialties is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs.
● Extremely high dV/dt capability
● Very low intrinsic capacitance
ST Microelectronics
16 Pages / 0.43 MByte
ST Microelectronics
1 Pages / 0.09 MByte
ST Microelectronics
4 Pages / 0.01 MByte
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