TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.125 Ω |
Polarity | N-CH |
Power Dissipation | 140 W |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 650 V |
Continuous Drain Current (Ids) | 22A |
Rise Time | 8 ns |
Input Capacitance (Ciss) | 2880pF @100V(Vds) |
Input Power (Max) | 140 W |
Fall Time | 10 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 140W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 15.75 mm |
Size-Width | 5.15 mm |
Size-Height | 20.15 mm |
Operating Temperature | 150℃ (TJ) |
Make an effective common gate amplifier using this STW30N65M5 power MOSFET from STMicroelectronics. Its maximum power dissipation is 140000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ST Microelectronics
22 Pages / 1.24 MByte
ST Microelectronics
22 Pages / 1.24 MByte
ST Microelectronics
30 Pages / 0.31 MByte
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