| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 390 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Drain to Source Voltage (Vds) | 1 kV |
| Breakdown Voltage (Drain to Source) | 1000 V |
| Rise Time | 18 ns |
| Input Capacitance (Ciss) | 6600pF @25V(Vds) |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 600W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Length | 38.2 mm |
| Size-Width | 25.07 mm |
| Size-Height | 9.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel Enhancement Mode
●Avalanche Rated, Low Qg, Low Intrinsic Rg
●High dV/dt, Low trr
●Features
●• RF capable MOSFETs
●• Double metal process for low gate resistance
●• Unclamped Inductive Switching (UIS) rated
●• Low package inductance
● - easy to drive and to protect
●• Fast intrinsic rectifier
●Applications
●• DC-DC converters
●• Switched-mode and resonant-mode power supplies, >500kHz switching
●• DC choppers
●• Pulse generation
●• Laser drivers
IXYS Semiconductor
2 Pages / 0.09 MByte
IXYS Semiconductor
2 Pages / 0.38 MByte
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IXYS SEMICONDUCTOR IXFN24N100 Power MOSFET, N Channel, 24A, 1kV, 390mohm, 10V, 5.5V
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Trans MOSFET N-CH 1kV 24A 4Pin SOT-227B
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