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IXFN360N10T
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IXFN360N10T Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:SOT-227-4
Description:SOT-227B N-CH 100V 360A
Documentation:IXFN360N10T Datasheet (7 Pages)
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IXFN360N10T Datasheet PDF (7 Pages)
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IXFN360N10T Specifications

TYPEDESCRIPTION
Number of Pins4 Pin
Case/PackageSOT-227-4
Drain to Source Resistance (on) (Rds)0.0026 Ω
PolarityN-CH
Power Dissipation830 W
Threshold Voltage4.5 V
Drain to Source Voltage (Vds)100 V
Continuous Drain Current (Ids)360A
Rise Time142 ns
Input Capacitance (Ciss)36000pF @25V(Vds)
Fall Time26 ns
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)830W (Tc)
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IXFN360N10T Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
Operating Temperature-55℃ ~ 175℃ (TJ)
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IXFN360N10T Documents

IXFN360N10T Datasheet
IXYS Semiconductor
7 Pages / 0.17 MByte
IXFN360N10T Other Datasheet PDF
IXYS Semiconductor
6 Pages / 0.17 MByte

IXFN360N10 Documents

IXFN360N10T Datasheet PDF
IXYS Semiconductor
SOT-227B N-CH 100V 360A
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