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IXFN36N110P
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IXFN36N110P Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:SOT-227-4
Description:SOT-227B N-CH 1100V 36A
Documentation:IXFN36N110P Datasheet (4 Pages)
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IXFN36N110P Datasheet PDF (4 Pages)
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IXFN36N110P Specifications

TYPEDESCRIPTION
Mounting StyleChassis
Case/PackageSOT-227-4
PolarityN-CH
Power Dissipation1000W (Tc)
Drain to Source Voltage (Vds)1100 V
Continuous Drain Current (Ids)36A
Input Capacitance (Ciss)23000pF @25V(Vds)
Input Power (Max)1000 W
Power Dissipation (Max)1000W (Tc)
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IXFN36N110P Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXFN36N110P Documents

IXFN36N110P Datasheet
IXYS Semiconductor
4 Pages / 0.11 MByte
IXFN36N110P Other Datasheet PDF
IXYS Semiconductor
4 Pages / 0.1 MByte

IXFN36N110 Documents

IXFN36N110P Datasheet PDF
IXYS Semiconductor
SOT-227B N-CH 1100V 36A
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