| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 300 V |
| Current Rating | 73.0 A |
| Case/Package | SOT-227-4 |
| Power Rating | 520 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.045 Ω |
| Polarity | N-Channel |
| Power Dissipation | 520 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 300 V |
| Continuous Drain Current (Ids) | 73.0 A |
| Rise Time | 80 ns |
| Input Capacitance (Ciss) | 9000pF @25V(Vds) |
| Input Power (Max) | 520 W |
| Fall Time | 50 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 520W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Width | 25.42 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IXFN73N30 is a 300V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
● JEDEC TO-264 AA, epoxy meets UL94V-0 flammability
● miniBLOC with aluminium nitride isolation
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low inductance
● High power density
● Easy to mount
● Space-saving s
IXYS Semiconductor
4 Pages / 0.12 MByte
IXYS Semiconductor
2 Pages / 0.68 MByte
Littelfuse
Trans MOSFET N-CH 300V 73A 4-Pin SOT-227B
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