| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 735W (Tc) |
| Drain to Source Voltage (Vds) | 800 V |
| Rise Time | 16 ns |
| Input Capacitance (Ciss) | 8340pF @25V(Vds) |
| Input Power (Max) | 735 W |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 735W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel Enhancement Mode
●Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg , low trr
●Features
●• Double metal process for low gate resistance
●• International standard packages
●• Epoxy meet UL 94 V-0, flammability classification
●• Avalanche energy and current rated
●• Fast intrinsic Rectifier
●• miniBLOCK package version with Aluminum Nitrate isolation
IXYS Semiconductor
5 Pages / 0.12 MByte
IXYS Semiconductor
5 Pages / 0.13 MByte
IXYS Semiconductor
Trans MOSFET N-CH 800V 38A 3Pin(3+Tab) PLUS 247
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