| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-247-3 |
| Power Dissipation | 150000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 150 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
IGBT 600V 40A 150W Through Hole TO-247AD (IXGH)
IXYS Semiconductor
5 Pages / 0.3 MByte
IXYS Semiconductor
IGBT 600V 40A 150W TO247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
IGBT 600V 40A 150W TO247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 40A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
IGBT 600V 40A 150W TO247AD
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