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IXGH30N60B2D1
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IXGH30N60B2D1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 600V 70A 190000mW 3Pin(3+Tab) TO-247AD
Documentation:IXGH30N60B2D1 Datasheet (6 Pages)
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IXGH30N60B2D1 Datasheet PDF (6 Pages)
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IXGH30N60B2D1 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Rating190 W
Power Dissipation190000 mW
Breakdown Voltage (Collector to Emitter)600 V
Reverse recovery time25 ns
Input Power (Max)190 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)190000 mW
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IXGH30N60B2D1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTube
Size-Height21.46 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGH30N60B2D1 Documents

IXGH30N60B2D1 Datasheet
IXYS Semiconductor
6 Pages / 0.49 MByte
IXGH30N60B2D1 Other Datasheet PDF
IXYS Semiconductor
6 Pages / 0.58 MByte

IXGH30N60B2 Documents

IXGH30N60B2 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 70A 3Pin(3+Tab) TO-247AD
IXGH30N60B2D1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 70A 190000mW 3Pin(3+Tab) TO-247AD
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