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IXSH35N120A
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IXSH35N120A Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 1200V 70A 300000mW 3Pin(3+Tab) TO-247AD
Documentation:IXSH35N120A Datasheet (4 Pages)
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IXSH35N120A Datasheet PDF (4 Pages)
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IXSH35N120A Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Rating300 W
Power Dissipation300000 mW
Breakdown Voltage (Collector to Emitter)1200 V
Input Power (Max)300 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)300000 mW
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IXSH35N120A Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTube
Size-Length16.26 mm
Size-Width5.3 mm
Size-Height21.46 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXSH35N120A Documents

IXSH35N120A Datasheet
IXYS Semiconductor
4 Pages / 0.06 MByte
IXSH35N120A Other Datasheet PDF
IXYS Semiconductor
3 Pages / 0.27 MByte

IXSH35N120 Documents

IXSH35N120A Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 70A 300000mW 3Pin(3+Tab) TO-247AD
IXSH35N120B Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1.2kV 70A 3Pin(3+Tab) TO-247AD
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