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IXGN60N60
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IXGN60N60 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:SOT-227-4
Description:Trans IGBT Chip N-CH 600V 100A 250000mW 4Pin SOT-227B
Documentation:IXGN60N60 Datasheet (6 Pages)
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IXGN60N60 Datasheet PDF (6 Pages)
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IXGN60N60 Specifications

TYPEDESCRIPTION
Mounting StyleScrew
Number of Pins4 Pin
Voltage Rating (DC)600 V
Current Rating100 A
Case/PackageSOT-227-4
Power Dissipation250000 mW
Rise Time30.0 ns
Breakdown Voltage (Collector to Emitter)600 V
Input Capacitance (Cies)4nF @25V
Input Power (Max)250 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)250000 mW
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IXGN60N60 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingBulk
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGN60N60 Documents

IXGN60N60 Datasheet
IXYS Semiconductor
6 Pages / 0.47 MByte
IXGN60N60 Other Datasheet PDF
IXYS Semiconductor
9 Pages / 0.73 MByte

IXGN60 Documents

IXGN60N60 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 100A 250000mW 4Pin SOT-227B
IXGN60N60C2D1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 480000mW 4Pin SOT-227B
IXGN60N60C2 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 4Pin SOT-227B
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