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IXEN60N120D1
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IXEN60N120D1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:SOT-227-4
Description:Trans IGBT Chip N-CH 1200V 100A 445000mW 4Pin SOT-227B
Documentation:IXEN60N120D1 Datasheet (7 Pages)
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IXEN60N120D1 Datasheet PDF (7 Pages)
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IXEN60N120D1 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins4 Pin
Case/PackageSOT-227-4
Power Rating445 W
Breakdown Voltage (Collector to Emitter)1200 V
Input Capacitance (Cies)3.8nF @25V
Input Power (Max)445 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)40 ℃
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IXEN60N120D1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTube
Size-Length38.23 mm
Size-Width25.42 mm
Size-Height9.6 mm
Operating Temperature-40℃ ~ 150℃ (TJ)
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IXEN60N120D1 Documents

IXEN60N120D1 Datasheet
IXYS Semiconductor
7 Pages / 0.21 MByte
IXEN60N120D1 Other Datasheet PDF
IXYS Semiconductor
8 Pages / 0.19 MByte

IXEN60N120 Documents

IXEN60N120 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 100A 445000mW 4Pin SOT-227B
IXEN60N120D1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 100A 445000mW 4Pin SOT-227B
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