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IXSH45N120
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IXSH45N120 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 1200V 75A 300000mW 3Pin(3+Tab) TO-247AD
Documentation:IXSH45N120 Datasheet (2 Pages)
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IXSH45N120 Datasheet PDF (2 Pages)
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IXSH45N120 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Rating300 W
Power Dissipation300000 mW
Breakdown Voltage (Collector to Emitter)1200 V
Input Power (Max)300 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)300000 mW
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IXSH45N120 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusEnd of Life
PackagingTube
Size-Height21.46 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXSH45N120 Documents

IXSH45N120 Datasheet
IXYS Semiconductor
2 Pages / 0.05 MByte
IXSH45N120 Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.09 MByte

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IXSH45N120 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 75A 300000mW 3Pin(3+Tab) TO-247AD
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