| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 200000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 50 ns |
| Input Power (Max) | 200 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 600V 50A 200W Through Hole TO-247AD (IXSH)
IXYS Semiconductor
6 Pages / 0.08 MByte
IXYS Semiconductor
3 Pages / 0.27 MByte
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Trans IGBT Chip N-CH 600V 48A 250000mW 3Pin(3+Tab) TO-247
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Trans IGBT Chip N-CH 600V 55A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 55A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 50A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 55A 3Pin(3+Tab) TO-247AD
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