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IXSH30N60B2D1
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IXSH30N60B2D1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 600V 48A 250000mW 3Pin(3+Tab) TO-247
Documentation:IXSH30N60B2D1 Datasheet (6 Pages)
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IXSH30N60B2D1 Datasheet PDF (6 Pages)
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IXSH30N60B2D1 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Voltage Rating (DC)600 V
Current Rating48.0 A
Case/PackageTO-247-3
Power Dissipation250 W
Rise Time30.0 ns
Breakdown Voltage (Collector to Emitter)600 V
Reverse recovery time30 ns
Input Power (Max)250 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)250000 mW
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IXSH30N60B2D1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingBulk
Size-Length16.26 mm
Size-Width5.3 mm
Size-Height21.46 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXSH30N60B2D1 Documents

IXSH30N60B2D1 Datasheet
IXYS Semiconductor
6 Pages / 0.5 MByte
IXSH30N60B2D1 Other Datasheet PDF
IXYS Semiconductor
3 Pages / 0.27 MByte

IXSH30N60B2 Documents

IXSH30N60B2D1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 48A 250000mW 3Pin(3+Tab) TO-247
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