| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Polarity | N-CH |
| Power Dissipation | 700 W |
| Threshold Voltage | 6 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 46A |
| Rise Time | 50 ns |
| Input Capacitance (Ciss) | 7000pF @25V(Vds) |
| Input Power (Max) | 700 W |
| Fall Time | 42 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 700W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 19.96 mm |
| Size-Width | 5.13 mm |
| Size-Height | 26.16 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Make an effective common gate amplifier using this IXTK46N50L power MOSFET from Ixys Corporation. Its maximum power dissipation is 700000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
IXYS Semiconductor
5 Pages / 0.11 MByte
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