| TYPE | DESCRIPTION |
|---|
| Mounting Style | Chassis |
| Number of Pins | 3 Pin |
| Case/Package | SOT-227-4 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.12 Ω |
| Polarity | N-Channel |
| Power Dissipation | 400 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 36.0 A |
| Input Capacitance (Ciss) | 8500pF @25V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 400000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IXTN36N50 is a MegaMOS™FRED N-channel enhancement-mode Power MOSFET offers rugged polysilicon gate cell structure and low RDS (ON) HDMOS™ process. It is uninterruptible power systems (UPS), DC choppers, switch-mode and resonant-mode power supplies.
● International standard package miniBLOC (ISOTOP compatible)
● Low drain-to-case capacitance (<50pF)
● Low package inductance (<10nH) - Easy to drive and to protect
● Easy to mount with 2 screws
● Space saving
● High power density
IXYS Semiconductor
4 Pages / 0.36 MByte
IXYS Semiconductor
6 Pages / 0.12 MByte
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