| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 600000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 25 ns |
| Input Power (Max) | 600 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 600000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Minimize the current at your gate with the IXXH50N60C3D1 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 600000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.
IXYS Semiconductor
7 Pages / 0.18 MByte
IXYS Semiconductor
8 Pages / 0.18 MByte
IXYS Semiconductor
Igbt 600V 100A 600W To247ad
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 100A 600000mW Automotive 3Pin(3+Tab) TO-247AD
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