TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 280 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -65.0 V |
Current Rating | -100 mA |
Case/Package | TO-92-3 |
Polarity | PNP |
Power Dissipation | 625 mW |
Breakdown Voltage (Collector to Emitter) | 65 V |
Continuous Collector Current | 0.1A |
hFE Min | 180 @2mA, 5V |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Box |
Material | Silicon |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the PNP BC556BG general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
ON Semiconductor
7 Pages / 0.07 MByte
ON Semiconductor
9 Pages / 0.19 MByte
Fairchild
Trans GP BJT PNP 65V 0.1A 3Pin TO-92 Bulk
NXP
PNP general purpose transistors
Micro Electronics
PNP SILICON AF SMALL SIGNAL TRANSISTORS
Micro Commercial Components
PNP Silicon Amplifier Transistor 625mW
Rectron Semiconductor
PNP Silicon Planar Epitaxial Transistors
Continental Device
0.5W(1/2W) General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 0.1A Ic, 75 - 475 hFE
Diodes
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.