TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 30 W |
Breakdown Voltage (Collector to Emitter) | 450 V |
Continuous Collector Current | 4A |
hFE Min | 12 @2A, 5V |
Input Power (Max) | 30 W |
DC Current Gain (hFE) | 20 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 70000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | 150℃ (TJ) |
The BUL1102EFP is a NPN fast-switching Power Transistor manufactured in Multi Epitaxial Planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. It has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
● High voltage capability
● Very high switching speed
ST Microelectronics
13 Pages / 0.38 MByte
ST Microelectronics
20 Pages / 2.6 MByte
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