| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Number of Positions | 4 Position |
| Power Dissipation | 290 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 290 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 290 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 38.23 mm |
| Size-Width | 25.25 mm |
| Size-Height | 9.6 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IXA60IF1200NA is a 1200V XPT IGBT with SONIC™ diode and Extreme-light Punch-Through (XPT™) thin wafer technology. Rugged XPT design results in short circuit rated for 10µsec, very low gate charge and low EMI. The thin wafer technology combined with the XPT design results in a competitive low VCE (sat). SONIC™ diode offers fast and soft reverse recovery as well low operating forward voltage.
● Easy to parallel due to the positive temperature coefficient of the on-state voltage
● Reduced thermal resistance
● Low energy losses
● Fast switching
● Low tail current
● High power density
● Square Reverse Bias Safe Operating Areas (RBSOA) up to breakdown voltages
● Short circuit capability
IXYS Semiconductor
7 Pages / 0.14 MByte
IXYS Semiconductor
16 Pages / 0.13 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 88A 290000mW 4Pin SOT-227B Tube
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