K4S561632E-UC75 Datasheet PDF - Samsung

GENERAL DESCRIPTION

●The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG"s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

●FEATURES

●• JEDEC standard 3.3V power supply

●• LVTTL compatible with multiplexed address

●• Four banks operation

●• MRS cycle with address key programs

●-. CAS latency (2 & 3)

●-. Burst length (1, 2, 4, 8 & Full page)

●-. Burst type (Sequential & Interleave)

●• All inputs are sampled at the positive going edge of the system clock.

●• Burst read single-bit write operation

●• DQM (x4,x8) & L(U)DQM (x16) for masking

●• Auto & self refresh

●• 64ms refresh period (8K Cycle)

●• 54 TSOP(II) Pb-free Package

●• RoHS compliant