| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | CFDIPW-28 |
| Access Time | 200 ns |
| Operating Temperature (Max) | 70 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
DESCRIPTION
●The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.
●■ FAST ACCESS TIME: 200ns
●■ EXTENDED TEMPERATURE RANGE
●■ SINGLE 5V SUPPLY VOLTAGE
●■ LOW STANDBY CURRENT: 40mA max
●■ TTL COMPATIBLE DURING READ and PROGRAM
●■ FAST PROGRAMMING ALGORITHM
●■ ELECTRONIC SIGNATURE
●■ PROGRAMMING VOLTAGE: 12V
ST Microelectronics
11 Pages / 0.08 MByte
ST Microelectronics
NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
ST Microelectronics
NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
ST Microelectronics
NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
ST Microelectronics
NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
ST Microelectronics
NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
ST Microelectronics
NMOS 512K 64K ×8uV EPROM NMOS 512K 64K x 8uV EPROM
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