SUMMARY DESCRIPTION
●The M29DW323D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its
●Read mode.
●FEATURES SUMMARY
●■ SUPPLY VOLTAGE
●–VCC = 2.7V to 3.6V for Program, Erase and Read
●–VPP=12V for Fast Program (optional)
●■ ACCESS TIME: 70ns
●■ PROGRAMMING TIME
●– 10µs per Byte/Word typical
●– Double Word/ Quadruple Byte Program
●■ MEMORY BLOCKS
●– Dual Bank Memory Array: 8Mbit+24Mbit
●– Parameter Blocks (Top or Bottom Location)
●■ DUAL OPERATIONS
●– Read in one bank while Program or Erase in other
●■ ERASE SUSPEND and RESUME MODES
●– Read and Program another Block during Erase Suspend
●■ UNLOCK BYPASS PROGRAM COMMAND
●– Faster Production/Batch Programming
●■ VPP/WPPIN for FAST PROGRAM and WRITE PROTECT
●■ TEMPORARY BLOCK UNPROTECTION MODE
●■ COMMON FLASH INTERFACE
●– 64 bit Security Code
●■ EXTENDED MEMORY BLOCK
●– Extra block used as security block or to store additional information
●■ LOW POWER CONSUMPTION
●– Standby and Automatic Standby
●■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
●■ ELECTRONIC SIGNATURE
●– Manufacturer Code: 0020h
●– Top Device Code M29DW323DT: 225Eh
●– Bottom Device Code M29DW323DB: 225Fh
