GENERAL DESCRIPTION
●The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the MAT03 an excellent choice for demanding preamplifier applications. Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 Ω) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance.
●Each transistor is individually tested to data sheet specifications. Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges. To insure the long term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base emitter junction potential. This prevents a base-emitter break down condition which can result in degradation of gain and matching performance due to excessive breakdown current.
●FEATURES
● Dual Matched PNP Transistor
● Low Offset Voltage: 100 mV max
● Low Noise: 1 nV/√Hz @ 1 kHz max
● High Gain: 100 min
● High Gain Bandwidth: 190 MHz typ
● Tight Gain Matching: 3% max
● Excellent Logarithmic Conformance: rBE = 0.3 Ω typ
● Available in Die F
