| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 200 MHz |
| Number of Pins | 6 Pin |
| Case/Package | TO-78-6 |
| Number of Positions | 6 Position |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 0.02A |
| hFE Min | 200 |
| hFE Max | 605 |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Width | 9.4 mm |
| Size-Height | 4.7 mm |
| Operating Temperature | -40℃ ~ 85℃ |
The MAT12AHZ is a NPN dual-matched Bipolar Transistor Array specifically designed to meet the requirements of ultralow noise audio systems. It has extremely low input base spreading resistance and high current gain. It can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (ΔhFE) to about 0.5% and low VOS of less than 10µV typical make the MAT12 ideal for symmetrically balanced designs, which reduce high-order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base emitter junction. The device is also an ideal choice for accurate and reliable current biasing and mirroring circuits.
● Very low voltage noise - 1nV/√Hz max @ 100Hz
● 0.5% Excellent current gain match
● 200µV Maximum low offset voltage (VOS)
● 0.03µV/°C Outstanding offset voltage drift
● 200MHz High gain bandwidth product
● -40 to 85°C Operating temperature range
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