| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 10.0 A |
| Capacitance | 1.50 pF |
| Case/Package | TO-226-2 |
| Output Current | ≤100 mA |
| Number of Positions | 2 Position |
| Forward Voltage | 0.6 V |
| Polarity | Standard |
| Power Dissipation | 280 mW |
| Forward Current | 10 mA |
| Maximum Forward Voltage (Max) | 600 mV |
| Forward Current (Max) | 10 mA |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 125 ℃ |
| Power Dissipation (Max) | 280 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 5.21 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 125℃ (TJ) |
30 VOLTS SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES
●SCHOTTKY Barrier Diodes
●These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.
●Features
●•Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
●•Very Low Capacitance − 1.5 pF (Max) @ VR= 15 V
●•Low Reverse Leakage − IR= 13 nAdc (Typ) MBD301, MMBD301
●•Pb−Free Packages are Available
ON Semiconductor
5 Pages / 0.1 MByte
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ON Semiconductor
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ON Semiconductor
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Schottky Diode UHF 30V, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX
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