| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -35.0 V |
| Current Rating | -2.00 A |
| Case/Package | SOT-23-6 |
| Halogen Free Status | Halogen Free |
| Polarity | PNP, P-Channel |
| Power Dissipation | 625 mW |
| Gain Bandwidth Product | 100 MHz |
| Breakdown Voltage (Collector to Emitter) | 35 V |
| Continuous Collector Current | 2A |
| hFE Min | 100 @1.5A, 1.5V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 3.1 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
ON Semiconductor has the solution to your circuit"s high-voltage requirements with their PNP MBT35200MT1G general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 35 V and a maximum emitter base voltage of 5 V.
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