| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 18 MHz |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | -120 V |
| Current Rating | -15.0 A |
| Case/Package | TO-204-2 |
| Number of Positions | 2 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 180 W |
| Breakdown Voltage (Collector to Emitter) | 120 V |
| Thermal Resistance | 1.52℃/W (RθJC) |
| Continuous Collector Current | 15A |
| hFE Min | 10 @4A, 2V |
| hFE Max | 70 |
| Input Power (Max) | 115 W |
| DC Current Gain (hFE) | 70 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 115000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Material | Silicon |
| Size-Length | 39.37 mm |
| Size-Width | 26.67 mm |
| Size-Height | 8.51 mm |
| Operating Temperature | -65℃ ~ 200℃ |
The MJ15016G is a -120V Silicon PNP Bipolar Complementary High Power Transistor designed for high power audio, disk head positioners and other linear applications. The transistor can also be used in power switching circuits such as relay or solenoid drivers, DC TO DC converters, inverters or for inductive loads requiring higher safe operating area.
● High current gain bandwidth
● Safe operating area
● Collector-base voltage (Vcbo = 200V)
● Emitter-base voltage (Vcbo = 7V)
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