| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.045 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 600 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| Continuous Drain Current (Ids) | 6.00 A |
| Rise Time | 33 ns |
| Input Capacitance (Ciss) | 460pF @15V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.25 mm |
| Operating Temperature | 150℃ (TJ) |
The STS6NF20V is a STripFET™ II N-channel Power MOSFET specifically designed to minimize input capacitance and gate charge. The device is suitable for use as primary switch in advanced high-efficiency isolated DC-to-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
● Ultra low threshold gate drive
● Standard outline for easy automated surface-mount assembly
ST Microelectronics
1 Pages / 0.71 MByte
ST Microelectronics
15 Pages / 0.33 MByte
ST Microelectronics
8 Pages / 0.21 MByte
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