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SGB02N120
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SGB02N120 Datasheet PDF - Infineon

Manufacturer:Infineon
Category:IGBTs
Case Package:TO-263-3
Description:Trans IGBT Chip N-CH 1.2kV 6.2A 3Pin TO-263 T/R
Documentation:SGB02N120 Datasheet (11 Pages)SGB02N120 User Reference Manual Guide (270 Pages)SGB02N120 Application Note (48 Pages)
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SGB02N120 Datasheet PDF (11 Pages)
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SGB02N120 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-263-3
Breakdown Voltage (Collector to Emitter)1200 V
Input Power (Max)62 W
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SGB02N120 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended for New Design
PackagingTape & Reel (TR)
Size-Length10 mm
Size-Width9.25 mm
Size-Height4.4 mm
Operating Temperature-55℃ ~ 150℃
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SGB02N120 Documents

SGB02N120 Datasheet
Infineon
11 Pages / 0.42 MByte
SGB02N120 User Reference Manual Guide
Infineon
270 Pages / 11.59 MByte
SGB02N120 Other Datasheet PDF
Infineon
73 Pages / 2.93 MByte
SGB02N120 Application Note
Infineon
48 Pages / 2 MByte

SGB02 Documents

SGB02N120 Datasheet PDF
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SGB02N60ATMA1 Datasheet PDF
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SGB02N120CT Datasheet PDF
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IGBT, 2A, 1200V, N-CHANNEL
SGB02N60 Datasheet PDF
Siemens Semiconductor
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB
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