| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 10 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 1.56 W |
| Polarity | NPN |
| Power Dissipation | 1560 mW |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 30 @50mA, 10V |
| hFE Max | 30 @50mA, 10V |
| Input Power (Max) | 1.56 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 1560 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.8 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Diodes Zetex brings you the solution to your high-voltage BJT needs with their NPN MJD340-13 general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 3 V. Its maximum power dissipation is 1560 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 3 V.
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