| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | -40.0 V |
| Current Rating | -4.00 A |
| Case/Package | TO-126-3 |
| Polarity | PNP |
| Power Dissipation | 40 W |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 4A |
| hFE Min | 40 @1A, 1V |
| Input Power (Max) | 40 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Size-Length | 7.74 mm |
| Size-Width | 2.66 mm |
| Size-Height | 11.04 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 500 |
Plastic Medium−Power PNP Silicon Transistor
●This device is designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry.
●Features
●• DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc
●• MJE371 is Complementary to NPN MJE521
●• Pb−Free Package is Available
ON Semiconductor
3 Pages / 0.09 MByte
ON Semiconductor
22 Pages / 0.07 MByte
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