| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 350 mW |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| hFE Min | 20000 @100mA, 5V |
| Input Power (Max) | 350 mW |
| DC Current Gain (hFE) | 10000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Gain Bandwidth | 125MHz (Min) |
| Power Dissipation (Max) | 350 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.93 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.
●Applications
●---
● This product is general usage and suitable for many different applications.
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