| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 75 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 40.0 V |
| Current Rating | 2.00 A |
| Case/Package | TO-92-3 |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Gain Bandwidth Product | 75 MHz |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 2A |
| hFE Min | 75 @1A, 2V |
| Input Power (Max) | 625 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Box (TB) |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN MPS650ZL1G general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
ON Semiconductor
5 Pages / 0.09 MByte
ON Semiconductor
9 Pages / 0.19 MByte
Motorola
Small Signal Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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